2D tungsten chalcogenides

Layered transition metal chalcogenides possess properties that not only open up broad fundamental scientific enquiries but also indicate that a myriad of applications can be developed by using these materials. This is also true for tungsten‐based chalcogenides which can provide an assortment of structural forms with different electronic flairs as well as chemical activity. Such emergence of tungsten based chalcogenides as advanced forms of materials lead several investigators to believe that a tremendous opportunity lies in understanding their fundamental properties, and by utilizing that knowledge the authors may create function specific materials through structural tailoring, defect engineering, chemical modifications as well as by combining them with other layered materials with complementary functionalities. Indeed several current scientific endeavors have indicated that an incredible potential for developing these materials for future applications development in key technology sectors such as energy, electronics, sensors, and catalysis are perhaps viable. This review article is an attempt to capture this essence by providing a summary of key scientific investigations related to various aspects of synthesis, characterization, modifications, and high value applications. Finally, some open questions and a discussion on imminent research needs and directions in developing tungsten based chalcogenide materials for future applications are presented.

Authors:
Mohl Melinda, Rautio Anne-Riikka, Asres Georgies Alene, Wasala Milinda, Patil Prasanna Dnyaneshwar, Talapatra Saikat, Kordas Krisztian

Publication type:
A1 Journal article – refereed

Place of publication:

Keywords:
2D tungsten chalcogenides, electrocatalysis, field-effect transistors, photodetectors, Sensors

Published:

Full citation:
Mohl, M., Rautio, A., Asres, G. A., Wasala, M., Patil, P. D., Talapatra, S., & Kordas, K. (2020). 2D Tungsten Chalcogenides: Synthesis, Properties and Applications. Advanced Materials Interfaces, 7(13), 2000002. https://doi.org/10.1002/admi.202000002

DOI:
https://doi.org/10.1002/admi.202000002

Read the publication here:
http://urn.fi/urn:nbn:fi-fe2020090768694