This paper presents a broadband linearization technique that can be used for mmWave amplifier circuits. It is based on the well-known principle of derivative superposition, where FETs with different operating points are connected in parallel to generate mutually cancelling third order intermodulation distortion (IM3) products. It is demonstrated by measurements in excess of 10 dB improvement in IM3 obtained from 1 GHz to 30 GHz, practically free by connecting a NMOS with very low gate bias in parallel of an amplifying NMOS. The reasons and limits of the cancellation are discussed. The inherent broadbandness of the technique makes it extremely suitable to be used in CMOS mmWave circuits.
Authors:
Sethi Alok, Rusanen Jere, Aikio Janne P., Pärssinen Aarno, Rahkonen Timo
Publication type:
A4 Article in conference proceedings
Place of publication:
2019 14th European Microwave Integrated Circuits Conference Proceedings (EuMIC) 30 Sept-1 Oct 2019 Paris, France
Keywords:
3GPP, 5G, broadband, CMOS, DS, mmWave, NR, SOI
Published:
25 November 2019
Full citation:
A. Sethi, J. Rusanen, J. P. Aikio, A. Pärssinen and T. Rahkonen, “Broadband Linearization Technique for mmWave Circuits,” 2019 14th European Microwave Integrated Circuits Conference (EuMIC), Paris, France, 2019, pp. 17-20. doi: 10.23919/EuMIC.2019.8909530
DOI:
https://doi.org/10.23919/EuMIC.2019.8909530
Read the publication here:
http://urn.fi/urn:nbn:fi-fe2019120345406
