This paper concerns with the design of multi-stacked CMOS millimeter-wave power amplifiers suitable for phased array front-end applications using triple-well process. The parasitics posed by the triple-well technique are studied and compensated using negative capacitance technique for proper operation. The design technique is evaluated using TSMC 28nm CMOS process at 28GHz operating frequency as a candidate operating band for 5G systems. The results illustrate a power gain of 25dB, 22dBm saturated power, and a maximum 38% PAE along with superior phase alignment between stacks.
Montaseri Mohammad Hassan, Vuohtoniemi Risto, Aikio Janne, Rahkonen Timo, Pärssinen Aarno
A4 Article in conference proceedings
Place of publication:
2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)
13 December 2018
M. H. Montaseri, R. Vuohtoniemi, J. Aikio, T. Rahkonen and A. Pärssinen, “Design of Multi-Stacked CMOS mm-Wave Power Amplifiers for Phased Array Applications Using Triple-Well Process,” 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC), Tallinn, 2018, pp. 1-5. doi: 10.1109/NORCHIP.2018.8573452
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