Fabrication and characterization of c-Si/porous-Si/CdS/ZnxCd1-xo heterojunctions for applications in nanostructured solar cells

Solar cells based on c-Si/porous-Si/CdS/ZnₓCd₁₋ₓO heterojunctions were synthesized by depositing CdS films on c-Si/porous-Si (PS) substrates by electrochemical deposition (ED). PS layers with systematically varied pore diameter (8÷45 nm) and were fabricated on p-type c-Si wafers using electrochemical etching. The window layers of ZnₓCd₁₋ₓO with several Zn concentrations(x=0.2; 0.4; 0.5 and 0.6) were also deposited on the CdS buffer layers by ED. The photoelectrical properties of heterojunctions were studied as functions of PS pore size and Zn content in ZnₓCd₁₋ₓO. The optimal pore size and Zn contents were found to be 10 nm and x=0.6, respectively. These yielded a solar cell sample exhibiting an efficiency of 9.9%, the maximum observed in this study.

Authors:
Mamedov Huseyn M., Muradov Mustafa, Konya Zoltan, Kukovecz Akos, Kordas Krisztian, Shah Syed Ismat, Mamedova Vusala J., Ahmedova Khumar M., Tagiyev Elgun B., Mamedov Vusal U.

Publication type:
A1 Journal article – refereed

Place of publication:

Keywords:
6G Publication

Published:

Full citation:
Mamedov, H., Muradov, M., Konya, Z., Kukovecz, A., Kordas, K., Shah, S. I., Mamedova, V., Ahmedova, K., Tagiyev, E., & Mamedov, V. (2018). Fabrication and characterization of c-Si/porous-Si/CdS/ZnxCd1-xO heterojunctions for applications in nanostructured solar cells. Photonics Letters of Poland, 10(3), 73. https://doi.org/10.4302/plp.v10i3.813

DOI:
https://doi.org/10.4302/plp.v10i3.813

Read the publication here:
http://urn.fi/urn:nbn:fi-fe202003097626