Time-gated CMOS SPAD and a Quantum Well Laser Diode with a CMOS Driver for Time-Resolved Diffuse Optics Imaging

Single-Photon Avalanche Photodiodes (SPADs) were fabricated and characterized in 150 nm CMOS technology. The SPAD is based on a p+/nwell junction with a p-substrate guard ring. In addition, a compact gain switched quantum well (QW) laser diode with a CMOS driver was used with the proposed SPAD for time-resolved diffuse optics measurements. The measured impulse response function (IRF) of the SPADs was ∼50 ps at best. Two phantoms were measured to demonstrate the suitability of SPADs for time-resolved diffuse optics imaging (TRDOI).

Nissinen J., Nissinen I., Jahromi S., Talala T., Kostamovaara J.

A4 Article in conference proceedings

2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC),30-31 October 2018, Tallinn, Estonia

J. Nissinen, I. Nissinen, S. Jahromi, T. Talala and J. Kostamovaara, "Time-gated CMOS SPAD and a Quantum Well Laser Diode with a CMOS Driver for Time-Resolved Diffuse Optics Imaging," 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC), Tallinn, Estonia, 2018, pp. 1-4. doi: 10.1109/NORCHIP.2018.8573525

https://doi.org/10.1109/NORCHIP.2018.8573525 http://urn.fi/urn:nbn:fi-fe201901101935